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Ultraviolet light-emitting diodes at 340 nm using quaternary AlInGaN multiple quantum wells

Identifieur interne : 00FA96 ( Main/Repository ); précédent : 00FA95; suivant : 00FA97

Ultraviolet light-emitting diodes at 340 nm using quaternary AlInGaN multiple quantum wells

Auteurs : RBID : Pascal:02-0019378

Descripteurs français

Pascal (Inist)
- 7867D, 8107S, 8560J, 8115E, 7866F, 7321F, 6865F, 8535B, Etude expérimentale, Aluminium composé, Indium composé, Gallium composé, Semiconducteur III-V, Semiconducteur bande interdite large, Puits quantique semiconducteur, Diode électroluminescente, Méthode ALE, Croissance semiconducteur, Source lumière.

English descriptors

KwdEn :
- Aluminium compounds, Atomic layer epitaxial growth, Experimental study, Gallium compounds, III-V semiconductors, Indium compounds, Light emitting diodes, Light sources, Semiconductor growth, Semiconductor quantum wells, Wide band gap semiconductors.

Abstract

An ultraviolet light-emitting diode with peak emission wavelength at 340 nm is reported. The active layers of the device were comprised of quaternary AlInGaN/AlInGaN multiple quantum wells, which were deposited over sapphire substrates using a pulsed atomic-layer epitaxy process that allows precise control of the composition and thickness. A comparative study of devices over sapphire and SiC substrates was done to determine the influence of the epilayer design on the performance parameters and the role of substrate absorption. © 2001 American Institute of Physics.

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Pascal:02-0019378

Le document en format XML

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<author><name sortKey="Zhang, J P" uniqKey="Zhang J">J. P. Zhang</name>
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<front><div type="abstract" xml:lang="en">An ultraviolet light-emitting diode with peak emission wavelength at 340 nm is reported. The active layers of the device were comprised of quaternary AlInGaN/AlInGaN multiple quantum wells, which were deposited over sapphire substrates using a pulsed atomic-layer epitaxy process that allows precise control of the composition and thickness. A comparative study of devices over sapphire and SiC substrates was done to determine the influence of the epilayer design on the performance parameters and the role of substrate absorption. © 2001 American Institute of Physics.</div>
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Ultraviolet light-emitting diodes at 340 nm using quaternary AlInGaN multiple quantum wells

Ultraviolet light-emitting diodes at 340 nm using quaternary AlInGaN multiple quantum wells

Descripteurs français

English descriptors

Abstract

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Le document en format XML

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